120 nm resolution and 55 nm structure size in STED-lithography
120 nm resolution and 55 nm structure size in STED-lithography
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DOI：
10.1364/oe.21.010831
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发表时间：
2013-05-06
期刊：
影响因子：
3.8
通讯作者：
Klar, Thomas A.
中科院分区：
文献类型：
--
作者：
Wollhofen, Richard;Katzmann, Julia;Klar, Thomas A.
双光子激光直写（DLW）光刻在可实现的结构尺寸以及结构分辨率方面受到限制。将受激发射损耗（STED）添加到DLW可以克服这两个限制。我们现在把两者都推向了新的极限。使用双光子DLW（780 nm）和STED（532 nm）的可见光，我们获得了55 nm的横向结构尺寸，约100 nm的麻雀极限，我们提出了两个明显分开的线间隔仅120 nm。在这些实验中使用的光致抗蚀剂是三丙烯酸酯和四丙烯酸酯以及作为光引发剂的7-二乙基氨基-3-噻吩甲酰香豆素的混合物，其可以容易地通过STED淬灭。(C)2013年美国光学学会
Two-photon direct laser writing (DLW) lithography is limited in the achievable structure size as well as in structure resolution. Adding stimulated emission depletion (STED) to DLW allowed overcoming both restrictions. We now push both to new limits. Using visible light for two-photon DLW (780 nm) and STED (532 nm), we obtain lateral structure sizes of 55 nm, a Sparrow limit of around 100 nm and we present two clearly separated lines spaced only 120 nm apart. The photo-resist used in these experiments is a mixture of tri- and tetra-acrylates and 7-Diethylamino-3-thenoylcoumarin as a photo-starter which can be readily quenched via STED. (C) 2013 Optical Society of America