Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
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DOI：
10.1002/aelm.201700489
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发表时间：
2018-04
影响因子：
6.2
通讯作者：
M. Park;C. Chung;T. Schenk;C. Richter;M. Hoffmann;S. Wirth;Jacob L. Jones;T. Mikolajick;U. Schroeder
中科院分区：
文献类型：
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作者：
M. Park;C. Chung;T. Schenk;C. Richter;M. Hoffmann;S. Wirth;Jacob L. Jones;T. Mikolajick;U. Schroeder
系统地研究了Si掺杂HfO2薄膜中温度相关铁电性的结构来源。从温度相关的极化电场测量中可以看出，剩余极化随温度的降低而增加。同时，掠入射X射线衍射显示，正交相分数随温度的降低而增加。结构和铁电性能的温度依赖演化被认为是非常有前途的电热冷却应用。磁化测量没有提供任何表明在强晶体相变温度范围内磁化强度变化的指示，这表明磁性和结构性质相对解耦。结果被认为是萤石氧化物铁电体结构和电学性质随温度变化的强耦合演化的第一个直接证据。
The structural origin of the temperature‐dependent ferroelectricity in Si‐doped HfO2 thin films is systematically examined. From temperature‐dependent polarization‐electric field measurements, it is shown that remanent polarization increases with decreasing temperature. Concurrently, grazing incidence X‐ray diffraction shows an increase in the orthorhombic phase fraction with decreasing temperature. The temperature‐dependent evolution of structural and ferroelectric properties is believed to be highly promising for the electrocaloric cooling application. Magnetization measurements do not provide any indication for a change of magnetization within the temperature range for the strong crystalline phase transition, suggesting that magnetic and structural properties are comparatively decoupled. The results are believed to provide the first direct proof of the strongly coupled evolution of structural and electrical properties with varying temperature in fluorite oxide ferroelectrics.