Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
复制标题
光化学工程金属-半导体界面，用于硝基芳烃与甲酸的室温转移氢化
DOI：
10.1002/chem.201404325
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Wei X
中科院分区：
文献类型：
--
作者：
Li Xin-Hao;Cai Yi-Yu;Gong Ling-Hong;Fu Wei;Wang Kai-Xue;Wei Xiao;Chen Jie-Sheng;Bao Hong-Liang;Wei X
采用温和的光化学方法构建了高度耦合的金属-半导体二联体，发现它们能有效地促进硝基苯的加氢反应。以甲酸为氢源，水为溶剂，在室温下合成了苯胺，产率> 99%，TOF：1183。这种通用的绿色催化工艺适用于各种硝基芳烃，无需高压气体或牺牲性添加剂。
A mild photochemical approach was applied to construct highly coupled metal–semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high‐pressure gases or sacrificial additives.