Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes
Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes
复制标题
DOI:
10.1063/1.125771
复制
发表时间:
2000-01
影响因子:
4
通讯作者:
B. Choi;Hyunsik Yoon;H. H. Lee-H.
中科院分区:
文献类型:
--
作者:
B. Choi;Hyunsik Yoon;H. H. Lee-H.
SF6 plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance.