Sintering without grain growth for Mg2Si thermoelectric devices
Sintering without grain growth for Mg2Si thermoelectric devices
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DOI：
10.1002/pssc.201200793
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发表时间：
2013-08
期刊：
影响因子：
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通讯作者：
Shigeyuki Nakamura;Y. Mori;K. Takarabe
中科院分区：
文献类型：
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作者：
Shigeyuki Nakamura;Y. Mori;K. Takarabe
Mg2Si有望成为热电器件环保材料的候选材料。纳米晶化被认为是提高热电性能最有效的方法之一。如果烧结时晶粒长大，恐怕达不到纳米效应。因此，我们研究了烧结过程中的晶粒生长。我们发现，如果起始粉末的粒度分布相对均匀，则不会观察到晶粒生长。相反，如果相对不均匀，则观察到晶粒生长。我们得出的结论是，这可能是由于烧结过程中电流分布不均匀造成的。 （© 2013 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Mg2Si is expected as a candidate for environmental-friendly material of a thermoelectric device. Nano-crystallization is considered to be one of the most effective approaches to improve thermoelectric property. If grain grows up during sintering, we are afraid not to obtain nano-effect. We have, therefore, investigated grain growth during sintering. We have found that grain growth is not observed if particle size distribution of starting powder is relatively uniform. On the contrary, grain growth is observed if it is relatively not uniform. We have concluded this may be due to un-uniformly distributed current during sintering. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)