Coulomb Energy Determination of a Single Si Dangling Bond
Coulomb Energy Determination of a Single Si Dangling Bond
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DOI：
10.1103/physrevlett.105.226404
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发表时间：
2010-11-24
影响因子：
8.6
通讯作者：
Ebert, Ph.
中科院分区：
文献类型：
--
作者：
Nguyen, T. H.;Mahieu, G.;Ebert, Ph.
确定单点缺陷的库仑能至关重要，因为改变其电荷状态会严重影响材料的性能。基于一种新方法，我们可以同时识别点缺陷并监测其电子态的占据概率，我们用隧道光谱明确地测量了单个硅悬挂键的充电能量。将实验结果与紧束缚计算进行比较，凸显了局域态的特定周围环境对有效充电能量的重要性。
Determination of the Coulomb energy of single point defects is essential because changing their charge state critically affects the properties of materials. Based on a novel approach that allows us to simultaneously identify a point defect and to monitor the occupation probability of its electronic state, we unambiguously measure the charging energy of a single Si dangling bond with tunneling spectroscopy. Comparing the experimental result with tight-binding calculations highlights the importance of the particular surrounding of the localized state on the effective charging energy.