Thin Al(1-x) Ga (x) As(0.56)Sb(0.44) diodes with extremely weak temperature dependence of avalanche breakdown.
Thin Al(1-x) Ga (x) As(0.56)Sb(0.44) diodes with extremely weak temperature dependence of avalanche breakdown.
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DOI：
10.1098/rsos.170071
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发表时间：
2017-05
影响因子：
3.5
通讯作者：
Ng JS
中科院分区：
文献类型：
--
作者：
Zhou X;Tan CH;Zhang S;Moreno M;Xie S;Abdullah S;Ng JS
在应用中使用雪崩光电二极管 (APD) 时，雪崩击穿电压的温度依赖性是需要考虑的性能参数之一。因此，为 APD 开发的新型材料需要专门的实验研究。我们对薄 Al1–xGaxAs0.56Sb0.44 p–i–n 二极管晶片（Ga 成分从 0 到 0.15）进行了这样的研究，并测量了雪崩增益和暗电流。根据从77到297 K获得的数据，合金Al1−xGaxAs0.56Sb0.44表现出雪崩增益和击穿电压的弱温度依赖性，温度系数约为0.86–1.08 mV K−1，是许多半导体材料报道的最低值之一。考虑到在典型工作条件下在室温下没有观察到明显的隧道电流，合金 Al1−xGaxAs0.56Sb0.44（Ga 从 0 到 0.15）适用于需要出色的温度稳定性且无需高隧道电流的基于 InP 衬底的 APD。
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K−1, among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current.