Spin Hall magnetoresistance at high temperatures
Spin Hall magnetoresistance at high temperatures
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DOI：
10.1063/1.4907546
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发表时间：
2015-02
影响因子：
4
通讯作者：
K. Uchida;Z. Qiu;T. Kikkawa;R. Iguchi;E. Saitoh
中科院分区：
文献类型：
--
作者：
K. Uchida;Z. Qiu;T. Kikkawa;R. Iguchi;E. Saitoh
研究了Pt/Y_3Fe_5O_（12）（YIG）双层膜的自旋霍尔磁电阻（SMR）的温度特性。实验结果表明，SMR引起的磁电阻率的大小随温度的升高而单调减小，在居里温度附近几乎消失。我们发现，在居里温度附近，Pt/YIG薄膜中SMR的温度依赖性比YIG的磁化曲线的温度依赖性更陡;磁电阻比的临界指数估计为0.9。SMR的这种临界行为主要归因于Pt/YIG界面处自旋混合电导的温度依赖性。
The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y3Fe5O12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.