DC-DC converters in 0.35μm CMOS technology
DC-DC converters in 0.35μm CMOS technology
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采用 0.35μm CMOS 技术的 DC-DC 转换器
DOI：
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发表时间：
2012
期刊：
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通讯作者：
F. Ongaro
中科院分区：
文献类型：
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作者：
S. Michelis;B. Allongue;G. Blanchot;F. Faccio;C. Fuentes;S. Orlandi;S. Saggini;S. Céngarle;F. Ongaro
鉴于大型强子对撞机实验的升级，我们正在开发定制的DC/DC转换器，以实现更有效的功率分配方案。一个新的原型集成在asic中，采用了0.35μm商业高压技术，已成功测试了所有辐射效应：TID，位移损伤和单事件烧毁。该转换器已优化为高效率和提高辐射耐受性。其中最相关的新功能是内部线性稳压器的存在，带有状态机的保护电路以及用于改进封装组件的新引脚，以减少导电损耗。本文阐述了样机的设计，并进行了功能和辐射测试。
In view of the upgrade of the LHC experiments, we are developing custom DC/DC converters for a more efficient power distribution scheme. A new prototype have been integrated in ASICs in the selected 0.35μm commercial high voltage technology that has been successfully tested for all radiation effects: TID, displacement damage and Single Event Burnout. This converter has been optimized for high efficiency and improved radiation tolerance. Amongst the new features the most relevant are the presence of internal linear regulators, protection circuits with a state-machine and a new pinout for a modified assembly in package in order to reduce conductive losses. This paper illustrates the design of the prototype followed by functional and radiation tests.