Metastability and the hydrogen distribution in a‐Si:H
Metastability and the hydrogen distribution in a‐Si:H
复制标题
a-Si:H 中的亚稳定性和氢分布
DOI：
10.1063/1.41031
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
R. Street
中科院分区：
文献类型：
--
作者：
R. Street
亚稳态的研究将缺陷的产生与不同键合位点之间的氢运动联系起来。讨论的机制中的氢态密度分布，其一般特征是从简单的化学模型的氢键和弱的Si-Si键。该模型涉及亚稳态的平衡缺陷密度和氢扩散。
Studies of metastability relate defect creation to the motion of hydrogen between different bonding sites. The mechanism is discussed in terms of a hydrogen density of states distribution, whose general features are obtained from simple chemical models of hydrogen bonding and weak Si‐Si bonds. The model relates metastability to the equilibrium defect density and to the hydrogen diffusion.