Modification of drain current on metal-oxide-semiconductor field-effect transistor by magnetic field induced by remanent magnetization
Modification of drain current on metal-oxide-semiconductor field-effect transistor by magnetic field induced by remanent magnetization
复制标题
DOI：
10.1063/1.1812382
复制
发表时间：
2004-10-25
影响因子：
4
通讯作者：
Mizutani, N
中科院分区：
文献类型：
--
作者：
Wakiya, N;Shimizu, K;Mizutani, N
我们提出了一种利用来自外部磁场和剩余磁化感应磁场的洛伦兹力修正金属氧化物半导体场效应晶体管（MOSFET）漏极电流（I-ds）的概念。在此基础上制备了Pt/MZF/YSZ/MOSFET结构（MZF: mn0.60 zn0.30 fe2.100 o4, YSZ: Y0.15Zr0.85O1.93），并研究了磁场对电性能的影响。当载流子被推离界面时，磁场增加了I-ds。相反方向的磁场稍微增加了I-ds。这种现象与电势变化和载流子迁移率有关。它可能对存储设备的使用很有用。(C) 2004年美国物理研究所。
We propose a concept of drain current (I-ds) modification in a metal-oxide-semiconductor field-effect transistor (MOSFET) using the Lorentz force from an external magnetic field and a magnetic field induced by remanent magnetization. We fabricated a Pt/MZF/YSZ/MOSFET structure (MZF: Mn0.60Zn0.30Fe2.10O4, YSZ: Y0.15Zr0.85O1.93), based on this concept and examined the effect of the magnetic field on electrical properties. The magnetic field increased the I-ds when the carriers were pushed away from the interface. A magnetic field of the opposite direction increased I-ds slightly. This phenomenon is related to the potential change and carrier mobility. It may be useful for use in memory devices. (C) 2004 American Institute of Physics.