Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition
Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition
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金属有机化学气相沉积 Pb(Zr,Ti)O3 薄膜的化学计量和物相纯度
DOI：
10.1063/1.2337258
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发表时间：
2006
影响因子：
3.2
通讯作者：
John A. Rodriguez
中科院分区：
文献类型：
--
作者：
S. Aggarwal;K. Udayakumar;John A. Rodriguez
采用金属有机化学气相沉积方法在200 mm硅片上制备了(Pb，Zr)TiO_3(PZT)薄膜。在铅化学计量比对气相中铅含量增加相对不敏感的自校正区域内沉积了纯钙钛矿相薄膜。铅流量低于自校正区的薄膜为第二相，而铅流量高于自校正区的薄膜为第二相PbO。PZT颗粒呈柱状，从下电极一直延伸到上电极。在自校正区，标称厚度为70 nm的PZT薄膜表现出良好的铁电性能，1.5V时的开关极化为∼40μC/cm~2，饱和电压为∼1.2V。薄膜的平均粗糙度为∼4 nm，晶粒度为∼700A。研究了沉积温度、沉积压力、前驱体流量和沉积过程中氧气流量等沉积参数对自校正区域的影响。不断增加...
(Pb,Zr)TiO3 (PZT) films have been prepared by metal organic chemical vapor deposition on 200mm wafers. Phase pure perovskite films were deposited in a self-correcting region where the Pb stoichiometry is relatively insensitive to increasing Pb content in the gas phase. Films deposited with Pb flows lower than those used in the self-correcting region showed second phase ZrO2 whereas films deposited at Pb flows higher than those used in the self-correcting region showed second phase PbO. The PZT grains are columnar, extending from the bottom electrode to the top electrode. In the self-correcting region, PZT films of 70nm nominal thickness show good ferroelectric behavior with switched polarization of ∼40μC∕cm2 at 1.5V and saturation voltage of ∼1.2V. The films have an average roughness of ∼4nm with grain size of ∼700A. The impact of the deposition parameters such as deposition temperature, pressure, precursor flow, and oxygen flow during deposition on the self-correcting region was investigated. Increasing ...