PHOTOLUMINESCENCE OF TENSILE STRAINED, EXACTLY STRAIN COMPENSATED, AND COMPRESSIVELY STRAINED SI1-X-YGEXCY LAYERS ON SI
PHOTOLUMINESCENCE OF TENSILE STRAINED, EXACTLY STRAIN COMPENSATED, AND COMPRESSIVELY STRAINED SI1-X-YGEXCY LAYERS ON SI
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SI 上拉伸应变、精确应变补偿和压缩应变 SI1-X-YGEXCY 层的光致发光
DOI：
10.1103/physrevlett.80.3396
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发表时间：
1998
影响因子：
8.6
通讯作者：
K. Eberl
中科院分区：
文献类型：
--
作者：
O. Schmidt;K. Eberl
在应变补偿的Si 1− x− y Ge x C y多量子威尔斯阱中观察到了与带边相关的光致发光。对于（87±4）μ m厚的威尔斯量子阱，非声子能量随C含量的增加线性降低，为− y（6.8 eV）。在碳浓度低于0.85%时，推导出无应变Si 1− y C y材料的带隙。测量了从拉伸应变的Si 1− y C y和从压缩应变的Si 1− x Gex合金到精确应变补偿的Si 1 − x− y Gex C y结构的初始能量增加和随后的能量减少。不同的能带排列和应变诱导的电子和空穴能级交叉效应进行了讨论。
Band edge related photoluminescence is observed from strain compensated Si 1− x− y Ge x C y multiple quantum wells. For (87±4) Å thick quantum wells, the no-phonon energy decreases linearly with increasing C content as− y (6.8 eV). The band gap for unstrained Si 1− y C y material is deduced for carbon concentrations lower than 0.85%. An initial energy increase and a subsequent energy decrease on the way from tensile strained Si 1− y C y and from compressively strained Si 1− x Ge x alloys towards exactly strain compensated Si 1− x− y Ge x C y structures is measured. The different band alignments and strain-induced electron and hole level crossing effects are discussed.