FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES
FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES
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DOI：
10.1103/physrev.134.a713
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发表时间：
1964-01-01
期刊：
影响因子：
--
通讯作者：
SPITZER, WG
中科院分区：
文献类型：
--
作者：
MEAD, CA;SPITZER, WG
在所研究的14种IV或III-V族半导体中，除了3种外，金属-半导体界面的费米能级相对于导带的位置都是半导体带隙的恒定分数。在所有情况下，位置基本上与金属功函数无关。这一普遍结果与目前可用的有限表面态能量理论并不矛盾。这三种例外情况可以用对表面态能量的一级微扰来理解，该微扰与在(111)区边缘的能隙中观察到的类似微扰相关。实验还报道了对Ga(As-P)合金和两种II-VI材料表现出明显不同的行为。
The position of the Fermi level at a metal-semiconductor interface relative to the conduction band has been found to be a constant fraction of the semiconductor band gap for all but 3 of the 14 group IV or III-V semiconductors studied. In all cases, the position was essentially independent of the metal work function. This general result is not inconsistent with the limited theories of surface state energies now available. The three exceptional cases can be understood in terms of a first-order perturbation to the surface state energies correlated with a similar perturbation observed in the energy gap at the (111) zone edge. Experiments are also reported on Ga (As-P) alloys, and two II-VI materials showing distinctly different behavior.