Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination -: art. no. 161908
Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination -: art. no. 161908
复制标题
DOI：
10.1063/1.2196064
复制
发表时间：
2006-04-17
影响因子：
4
通讯作者：
Machida, K
中科院分区：
文献类型：
--
作者：
Piao, XQ;Horikawa, T;Machida, K
采用碳热还原氮化法制备了掺Eu ~（2+）的三元氮化物发光材料Sr_2Si_5N_8：Eu ~（2+）。Rietveld精修分析表明产物为单相。在漫反射光谱上观察到两个主要吸收带，峰值在约330和420 nm处，使得所得磷光体可以被InGaN发光二极管有效地激发。（Sr_（1-x）Eux）（2）Si_5 N_8：Eu ~（2+）系列的发光峰位随Eu ~（2+）离子浓度的增加而变化，在618 ~ 690 nm之间。在组态配位模型的基础上讨论了发射带的红移行为。(c)2006年，美国物理学会。
Eu2+-doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-xEux)(2)Si5N8:Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model. (c) 2006 American Institute of Physics.