Resonant periodic gain surface-emitting semiconductor lasers
Resonant periodic gain surface-emitting semiconductor lasers
复制标题
谐振周期增益表面发射半导体激光器
DOI：
--
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
B. E. Hammons
中科院分区：
文献类型：
--
作者：
M. Raja;S. Brueck;M. Osiński;C. Schaus;J. McInerney;T. Brennan;B. E. Hammons
描述了一种具有垂直腔体、极短增益介质长度和在特定设计波长处增益增强的表面发射半导体激光器结构。活性区由一系列量子阱组成，这些量子阱的间隔为量子阱中特定光学跃迁波长的一半。这种特殊的周期性使得驻波光场的天线与增益元件重合，增强了频率选择性，与均匀介质或非共振多量子阱相比，垂直方向的增益增加了两倍，并且大大减少了放大的自发发射。在分子束外延生长的GaAs/AlGaAs结构中实现了光泵浦激光，被认为是迄今为止报道的最短增益介质（310 nm）。>
A surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain medium length, and enhanced gain at a specific design wavelength is described. The active region consists of a series of quantum wells spaced at one half the wavelength of a particular optical transition in the quantum wells. This special periodicity allows the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the frequency selectivity, increasing the gain in the vertical direction by a factor of two compared to a uniform medium or a nonresonant multiple quantum well, and substantially reducing amplified spontaneous emission. Optically pumped lasing was achieved in a GaAs/AlGaAs structure grown by molecular-beam epitaxy, with what is believed to be the shortest gain medium (310 nm) ever reported. >