PREPARATION OF TIO2 AND AL2O3 THIN-FILMS BY ION-BEAM-INDUCED CHEMICAL-VAPOR-DEPOSITION
PREPARATION OF TIO2 AND AL2O3 THIN-FILMS BY ION-BEAM-INDUCED CHEMICAL-VAPOR-DEPOSITION
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DOI：
10.1016/0042-207x(94)90018-3
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发表时间：
1994-10-01
期刊：
影响因子：
4
通讯作者：
GONZALEZELIPE, AR
中科院分区：
文献类型：
--
作者：
LEINEN, D;FERNANDEZ, A;GONZALEZELIPE, AR
本文提出了一种制备薄膜氧化物的新方法。它结合了 CVD 和 IBAD 技术：将挥发性金属前体流引导到基材表面，同时用氧离子轰击基材表面。这引起前体的分解并形成相应的氧化物。使用三甲基铝和四乙醇钛作为挥发性前驱体，通过该方法制备了 Al2O3 和 TiO2 薄膜。通过 XPS 监测薄膜的生长动力学和碳含量。 SEM/TEM 的首次表征表明薄膜非常致密且均匀。通过紫外-可见光谱测定，TiO2 薄膜的折射率计算为 2.3 至 2.7 之间，具体取决于薄膜。
In this paper a new method for the preparation of thin film oxides is presented. It consists of a combination of CVD and IBAD techniques: a flow of a volatile metal precursor is directed on the surface of a substrate while it is bombarded with oxygen ions. This induces the decomposition of the precursor and the formation of the corresponding oxide. Thin films of Al2O3 and TiO2 have been prepared by this method using trimethyl aluminium and titanium tetraetoxide as volatile precursors. The kinetics of growth and the carbon content of the films have been monitored by XPS. A first characterization by SEM/TEM has shown that the films are very compact and homogeneous. The refractive index of the TiO2 films determined by uv-vis spectroscopy have been calculated to be between 2.3 and 2.7, depending on the film.