Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
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DOI：
10.1063/1.122298
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发表时间：
1998-09-28
影响因子：
4
通讯作者：
Meyer, BK
中科院分区：
文献类型：
--
作者：
As, DJ;Simonsmeier, T;Meyer, BK
利用二次离子质谱和低温光致发光（PL）研究了Mg在（100）GaAs衬底上用射频等离子体辅助分子束外延生长的立方GaN（c-GaN）外延层中的掺入和光学性质。通过将Mg通量改变超过四个数量级，Mg的掺入在高Mg通量下饱和，并且由于Mg在生长温度下的高挥发性而被限制在约5 × 10（18）cm（-3）的值。此外，我们观察到由于Mg扩散到GaAs衬底的Mg在GaN/GaAs界面处的积累。低温PL光谱揭示了几个很好的分离线。除了在E（A）处与0.230 eV一致的浅受主能级之外，额外的Mg相关的深缺陷能级指示Mg在镓外位点处或作为络合物的掺入。(C)1998年美国物理学会。[S0003-6951（98）00239-3]。
The incorporation and optical properties of Mg in cubic GaN (c-GaN) epilayers grown by rf plasma-assisted molecular beam epitaxy on (100) GaAs are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence (PL). By varying the Mg flux by more than four orders of magnitude, the incorporation of Mg saturates at high Mg flux and is limited to a value of about 5X10(18) cm(-3) due to the high volatility of Mg at growth temperature. In addition, we observe an accumulation of Mg at the GaN/GaAs interface due to a diffusion of Mg to the GaAs substrate. Low-temperature PL spectra reveal several well-separated lines. Besides a shallow acceptor level at E(A)congruent to 0.230 eV, additional Mg-related deep defect levels indicate an incorporation of Mg at off-gallium sites or as complexes. (C) 1998 American Institute of Physics. [S0003-6951(98)00239-3].