Single-Photon Emission from Point Defects in Aluminum Nitride Films
Single-Photon Emission from Point Defects in Aluminum Nitride Films
复制标题
氮化铝薄膜点缺陷的单光子发射
DOI：
10.1021/acs.jpclett.0c00511
复制
发表时间：
2020-04-02
影响因子：
5.7
通讯作者：
Sun, Bao-Quan
中科院分区：
文献类型：
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作者：
Xue, Yongzhou;Wang, Hui;Sun, Bao-Quan
量子技术需要强大且光稳定的单光子发射器。在这里，室温操作的单光子发射孤立的缺陷在氮化铝（AlN）薄膜的报告。采用金属有机物化学气相沉积法在蓝宝石衬底上制备了氮化铝薄膜。观测到的发射线范围从可见光到近红外，具有高度线性偏振特性。随温度变化的线宽增加表现为T-3或单指数行为。基于密度泛函理论的第一性原理计算表明，点缺陷物种，如反位氮空位复合物（NAlVN）和双空位（VAlVN）复合物，被认为是一个重要的物理起源，观察到的发射线范围从约550至1000 nm。这一结果为片上量子源的研究提供了一个新的平台。
Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition. The observed emission lines range from visible to near-infrared, with highly linear polarization characteristics. The temperature-dependent line width increase shows T-3 or single-exponential behavior. First-principle calculations based on density functional theory show that point defect species, such as antisite nitrogen vacancy complex (NAlVN) and divacancy (VAlVN) complexes, are considered to be an important physical origin of observed emission lines ranging from approximately 550 to 1000 nm. The results provide a new platform for on-chip quantum sources.