Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer
Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer
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DOI：
10.1016/j.orgel.2014.08.051
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发表时间：
2015-01-01
影响因子：
3.2
通讯作者：
Yoon, Sung-Min
中科院分区：
文献类型：
--
作者：
Jung, Soon-Won;Choi, Jeong-Seon;Yoon, Sung-Min
在聚二甲基硅氧烷（PDMS）弹性体衬底上制备了柔性有机铁电非易失性存储薄膜晶体管（OFMT），其中有机铁电层聚（偏乙烯-三氟乙烯）和有机半导体层聚（9，9-二辛基芴-co-bithiophene）分别用作栅极绝缘层和有源沟道。在PDMS上制备的OFMT的载流子迁移率、开/关比和亚阈值摆幅分别为5 × 10（-2）cm（2）V-1 s（-1）、7.5 × 10（3）和2.5 V/decade。当基板以0.6cm的曲率半径弯曲时，这些获得的值没有显著变化。最初获得的存储器开/关比为1.5 × 10（3），即使经过2000 s后也保持为20。所制造的OFMT即使在PDMS弹性体上也表现出足够令人鼓舞的器件特性，以实现机械可拉伸的非易失性存储器件。(C)2014爱思唯尔有限公司版权所有。
The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 x 10(-2) cm(2) V-1 s(-1), 7.5 x 10(3), and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 x 10(3) and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices. (C) 2014 Elsevier B.V. All rights reserved.