Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon
Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon
复制标题
Si 纳米颗粒激发对 Sm 掺杂多孔硅 Sm 光致发光的贡献
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
G. Qin
中科院分区：
文献类型：
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作者：
J. Lin;A. Tsukune;M. Yamada;G. Yao;G. Qin
我们证明了Sm掺杂多孔Si和Sm掺杂SiO2的Sm光致发光过程（包括光激发、转移和复合）是不同的：对于Sm掺杂多孔Si，除了Sm掺杂SiO2的正常过程外，还存在电子-空穴对在Si纳米粒子中被激发然后转移到Sm相关发光中心进行复合的过程。这一过程对Sm发光的贡献与正常过程的比例随着氧化温度的升高而降低。然而，它与光激发波长有复杂的关系。我们建议一种可以计算其价值的方法。
We demonstrate that the Sm photoluminescence processes (including photoexcitation, transfer, and recombination) for Sm-doped porous Si and Sm-doped SiO2 are different: In the case of Sm-doped porous Si, there is a process by which electron-hole pairs are excited in Si nanoparticles and then transfer to Sm-related luminescence centers to recombine, in addition to the normal process of Sm-doped SiO2. The ratio of contribution to Sm luminescence of such a process to a normal one decreases with increasing the oxidation temperature. However, it has a complicated relationship with the photoexcitation wavelength. We suggest a method which makes it possible to calculate its value.