MoOx/Ag/MoOx transparent electrode by solution process
MoOx/Ag/MoOx transparent electrode by solution process
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DOI：
10.7567/jjap.56.05eb05
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发表时间：
2017-04
影响因子：
1.5
通讯作者：
Ryota Kan;Yuka Yamano;T. Tani;T. Uchida
中科院分区：
文献类型：
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作者：
Ryota Kan;Yuka Yamano;T. Tani;T. Uchida
我们研究了一种电介质-金属-电介质（DMD）多层膜，它与传统的透明导电氧化物如氧化铟锡（ITO）相比是独特的。在这项研究中，我们选择了MoO 3和Ag作为介电材料和金属，分别采用了纳米雾的方法，除了真空蒸发之一。薄膜的透射光谱表明，随着Ag层厚度的增加，Ag膜的形貌由孤立的岛状结构转变为连续的层状结构，MoO 3的加入增强了Ag膜的形貌变化。然后，MoO_3/Ag/MoO_3（MAM）多层结构的透明电极可以通过纳米雾的方法以及通过真空蒸发之一。对两种方法制备的MAM膜的性能进行了比较研究，以便于应用。
We have investigated a dielectric–metal–dielectric (DMD) multilayer film, which is unique as compared with such conventional transparent conductive oxides as indium tin oxide (ITO). In this study, we have selected MoO3 and Ag as the dielectric material and metal, respectively, and employed a nano-mist method in addition to a vacuum evaporation one. The transmission spectra of the films indicated that the Ag morphology changed from isolated islands to continuous layers with increasing Ag layer thickness, and that the morphology change was enhanced by MoO3. Then, MoO3/Ag/MoO3 (MAM) multilayer-structured transparent electrodes could be fabricated by a nano-mist method as well as by a vacuum evaporation one. Comparative examination is made on the properties of MAM films fabricated by these two methods for their application.