Acceleration of grain boundary motion in Al by small additions of Ga
Acceleration of grain boundary motion in Al by small additions of Ga
复制标题
添加少量 Ga 加速 Al 中的晶界运动
DOI：
10.1080/09500839508242475
复制
发表时间：
1995
影响因子：
1.2
通讯作者：
W. Gust
中科院分区：
文献类型：
--
作者：
D. Molodov;U. Czubayko;G. Gottstein;L. Shvindlerman;B. Straumal;W. Gust
摘要 在400~580°C的温度范围内，研究了纯（99·999%）Al双晶和掺杂10ppmGa的相同Al双晶中取向角分别为38·2°和40·5°的<111>倾斜晶界的温度依赖性。在整个研究温度范围内，所研究晶界的晶界迁移率通过少量添加 Ga 得到增强。活化焓和指前因子均受到 Ga 掺杂的影响。晶界迁移率的取向依赖性显着降低，但并未完全消除。在纯Al中添加Ga导致晶界迁移率急剧上升，这被解释为由于预润湿相变和晶界上液态（或准液态）富Ga层的形成而导致晶界结构和晶界迁移机制发生变化的结果。
Abstract The temperature dependence of 〈111〉 tilt grain boundaries with angles of misorientation of 38·2° and 40·5° was investigated in bicrystals of both pure (99·999%) Al and the same Al doped with 10ppmGa in the temperature regime between 400 and 580°C. The grain boundary mobility for the investigated grain boundaries over the entire investigated temperature range is enhanced by minor additions of Ga. Both the activation enthalpy and the pre-exponential factor are affected by Ga doping. The orientation dependence of grain boundary mobility is strongly reduced but not completely removed. The drastic rise in grain boundary mobility by the addition of Ga to pure Al is interpreted as a consequence of a change in the boundary structure and the mechanism of boundary migration owing to a pre-wetting phase transition and formation of a liquid (or quasiliquid) Ga-rich layer on the grain boundary.