Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers
Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers
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DOI：
10.1063/5.0077223
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发表时间：
2022-01
影响因子：
3.2
通讯作者：
H. Austin;B. Mitchell;D. Timmerman;J. Tatebayashi;S. Ichikawa;Y. Fujiwara;V. Dierolf
中科院分区：
文献类型：
--
作者：
H. Austin;B. Mitchell;D. Timmerman;J. Tatebayashi;S. Ichikawa;Y. Fujiwara;V. Dierolf
