On the oxide thickness extraction in deep-submicron technologies

On the oxide thickness extraction in deep-submicron technologies
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深亚微米技术中氧化物厚度提取

DOI:
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发表时间:
1997
期刊:
IEEE International Conference on Microelectronic Test Structures. Proceedings
影响因子:
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通讯作者:
C. Papadas
C. Papadas
中科院分区:
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文献类型:
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作者:
E. Vincent;G. Ghibaudo;G. Morin;C. Papadas

文献摘要

被引文献

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在深亚微米工艺中,随着电源电压的降低,超薄氧化物的厚度测量变得越来越困难。本文讨论了现有提取方法的缺点,并提出了一种具有多种优点的原始提取方法。该提取过程基于由经典C-V测量获得的曲线图1/C vs 1/(V/subG/-V/subFb/),易于实现,并提供更准确的氧化层厚度结果。
Thickness measurement of ultrathin oxides is more and more difficult due to the oxide thickness scale down following the supply voltage decrease in deep-submicron technologies. This paper discusses the drawbacks of the already existing extraction methods and proposes an original approach which has various advantages. This extraction procedure, based on the plot 1/C vs 1/(V/sub G/-V/sub FB/) obtained by classical C-V measurements, can be easily implemented and provides more accurate oxide thickness results.