The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
复制标题
DOI：
10.1063/1.2126786
复制
发表时间：
2005-11-01
影响因子：
3.2
通讯作者：
Ambacher, O
中科院分区：
文献类型：
--
作者：
Lebedev, V;Morales, FM;Ambacher, O
报道了用等离子体诱导分子束外延在Al2O3（0001）衬底上生长掺硅AlN（0001）薄膜。我们发现Si作为AlN生长的有效表面活性剂对外延有积极的影响，对晶体质量有显著的影响。结果表明，在AlN（0001）表面上，与Al原子密切相关的特征表面重构序列明显是Si诱导的。研究还发现，重掺杂条件会导致Si在螺纹位错网络上的体积偏析，并导致积聚的Al和偏析的Si在表面氧化而形成非晶（AlO）（SiO）N帽层。用Ar+溅射法去除帽层后，在干净的AlN表面测得的电子亲和力小于0.5 eV。(c) 2005年美国物理研究所。
The growth of Si-doped AlN(0001) thin films on Al2O3(0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN (0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar+ sputtering. (c) 2005 American Institute of Physics.