Array configuration and silicon-lens integration of asymmetric dual-grating-gate plasmonic THz detectors
Array configuration and silicon-lens integration of asymmetric dual-grating-gate plasmonic THz detectors
复制标题
非对称双光栅门等离子体太赫兹探测器的阵列配置和硅透镜集成
DOI：
10.1109/irmmw-thz.2016.7758755
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
A. Satou
中科院分区：
文献类型：
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作者：
F. Kasuya;H. Taniguchi;T. Watanabe;T. Suemitsu;T. Otsuji;T. Ishibashi;M. Shimizu;Y. Takida;H. Ito;H. Minamide;A. Satou
为了提高等离子体太赫兹探测器的外耦合效率，我们研究了非对称双栅栅高电子迁移率晶体管(A-DGG HEMT)的阵列结构和硅透镜集成。我们展示了通过四个串联的探测器阵列将效率提高4倍，通过超半球硅透镜集成将效率提高6倍。这些初步结果表明，有可能将A-DGG HEMT的外部响应性提高到其内在价值。
We examine array configuration and silicon-lens integration of asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors in order to enhance their external coupling efficiencies. We demonstrate 4-fold enhancement of the efficiency by an array of four series-connected detectors and 6-fold enhancement by the hyper-hemispherical silicon-lens integration. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.