Intense photoluminescence from laterally anodized porous Si
Intense photoluminescence from laterally anodized porous Si
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DOI：
10.1063/1.105752
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发表时间：
1991-12
影响因子：
4
通讯作者：
K. Jung;S. Shih;T. Hsieh;D. Kwong;T. Lin
中科院分区：
文献类型：
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作者：
K. Jung;S. Shih;T. Hsieh;D. Kwong;T. Lin
我们研究了多孔硅在沿着硅片长度方向阳极氧化后的光致发光。观察到宽的PL峰，峰强度在λ 640至720 nm。在550 ~ 860 nm波长范围内可观察到较强的光致发光。室温峰强度在4.2 K下获得的AlGaAs/GaAs多量子威尔斯阱的峰强度的一个数量级内，并且总强度相当。在500 °C下在O2中热退火和随后的HF浸渍之后，可以观察到峰强度从λ 680至620 nm的蓝移。
We have studied photoluminescence (PL) from porous Si anodized laterally along the length of the Si wafer. Broad PL peaks were observed with peak intensities at ∼640 to 720 nm. Strong PL intensity could be observed from 550 to 860 nm. Room‐temperature peak intensities were within an order of magnitude of peak intensities of AlGaAs/GaAs multi‐quantum wells taken at 4.2 K, and total intensities were comparable. A blue shift of peak intensities from ∼680 to 620 nm could be observed after thermal anneal at 500 °C in O2 and subsequent HF dip.