Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices
Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices
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DOI：
10.1109/pesc.2001.954439
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发表时间：
2001-06
期刊：
影响因子：
--
通讯作者：
K. Gan;Y.C. Liang;G. Samudra;S. Xu;L. Yong
中科院分区：
文献类型：
--
作者：
K. Gan;Y.C. Liang;G. Samudra;S. Xu;L. Yong
首次提出了一种新型的VDMOS结构--多晶侧翼VDMOS（PFVDMOS），为超结MOSFET器件提供了更好的性能和工艺技术。该结构包含一个薄的氧化物屏障，以消除现有的p-n横向互扩散问题，从而n-epi和p多晶硅列宽度可以减少到最小。这种列宽度的减小使得器件能够具有高得多的n-外延掺杂浓度。在某种意义上，它导致了最佳的降低导通电阻相比，其他现有的结构相同的额定电压。
A novel VDMOS structure, named poly flanked VDMOS (PFVDMOS), is proposed for the first time to provide a better performance and process technology for superjunction MOSFET devices. The structure contains a thin oxide barrier to eliminate the existing p-n lateral interdiffusion problem, thus both the n-epi and p poly column widths can be reduced to a minimum. This reduction in column width enables the device to have a much higher n-epi doping concentration. In a sense, it leads to an optimal reduction in on-state resistance compared to other existing structures for the same voltage rating.