30 GHz Monolithically Integrated Frequency Multiplier Based on GaN Planar Schottky Barrier Diode
30 GHz Monolithically Integrated Frequency Multiplier Based on GaN Planar Schottky Barrier Diode
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基于 GaN 平面肖特基势垒二极管的 30 GHz 单片集成倍频器
DOI：
10.1109/iccsd.2019.8843218
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Jun Jiang
中科院分区：
文献类型：
--
作者：
Ning An;Li Li;Qian Li;Jianping Zeng;Yang Tang;Jun Jiang
研制成功了基于平面GaN肖特基势垒二极管的30 GHz单片集成倍频器。研究了材料参数和阳极尺寸对倍频器的影响。单片集成方法的使用显著提高了GaN倍频器的性能。该倍频器输出功率大于3dBm，频率范围为21.5~39.5 GHz。最大输出功率为9.68dBm，频率为28.5 GHz，效率高达16.1%。在中心频率为30 GHz时，输出功率为9.64 dBm，效率为15.0%。
A 30 GHz monolithically integrated frequency multiplier based on the planar GaN Schottky barrier diode are successfully fabricated. The impact of material parameters and anode dimension on the frequency multiplier are investigated. The use of the monolithic integrated approach significantly improves the performance of the GaN frequency multiplier. The frequency multiplier gains a more than 3 dBm output power with frequency range from 21.5 to 39.5 GHz. The maximum output power is 9.68 dBm at 28.5 GHz with efficiency up to 16.1%. At the central frequency of 30 GHz, the output power is 9.64 dBm with 15.0% efficiency.