Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms
Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms
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DOI：
10.1002/pssr.201800489
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发表时间：
2019-03-01
影响因子：
2.8
通讯作者：
Huffaker, Diana L.
中科院分区：
文献类型：
--
作者：
Kim, Hyunseok;Lee, Wook-Jae;Huffaker, Diana L.
在硅平台上集成超紧凑光源被认为是各种纳米光子应用的关键要求。在这项工作中，InGaAs/InP核/壳纳米线阵列光子晶体激光器的绝缘体上的硅衬底上的选择区域外延证明。通过在二维硅光栅上形成9 × 9正方形晶格纳米线，实现了具有仅3.0 × 3.0 μ m（2）的足迹和23000的高Q因子的光子晶体腔。室温下的激光从一个基本的带边模式在1290 nm，这是O波段的电信波长观察。优化的生长模板和InGaAs纳米线的有效原位钝化使纳米线阵列能够在200 μ J cm（-2）的低阈值下产生激光，而没有任何高于阈值的加热或降解的特征。这些结果代表了在硅光子平台上实现超紧凑和单片III-V激光器的有意义的一步。
Integration of ultracompact light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell nanowire array photonic crystal lasers are demonstrated on silicon-on-insulator substrates by selective-area epitaxy. 9 x 9 square-lattice nanowires forming photonic crystal cavities with a footprint of only 3.0 x 3.0 mu m(2), and a high Q factor of 23 000 are achieved by forming these nanowires on two-dimensional silicon gratings. Room-temperature lasing is observed from a fundamental band-edge mode at 1290 nm, which is the O-band of the telecommunication wavelength. Optimized growth templates and effective in-situ passivation of InGaAs nanowires enable the nanowire array to lase at a low threshold of 200 mu J cm(-2), without any signature of heating or degradation above the threshold. These results represent a meaningful step toward ultracompact and monolithic III-V lasers on silicon photonic platforms.