Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability
Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability
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DOI：
10.1109/ted.2023.3260803
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发表时间：
2023-05
影响因子：
3.1
通讯作者：
Jie Wei;Pengcheng Zhu;Kemeng Yang;Kaiwei Dai;Jie Li;Junnan Wang;Zhaoji Li;Bo Zhang;X. Luo
中科院分区：
文献类型：
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作者：
Jie Wei;Pengcheng Zhu;Kemeng Yang;Kaiwei Dai;Jie Li;Junnan Wang;Zhaoji Li;Bo Zhang;X. Luo
提出了一种具有反向导通(RC)能力的超快开关横向绝缘栅双极晶体管(LIGBT)，并进行了仿真研究。LIGBT具有自适应PMOS，以浮动欧姆接触(FOC)为漏极，集成续流二极管(IFWD)(称为自适应PMOS和二极管(SPD)LIGBT)。PMOS栅极由iFWD n漂移区上方的电势引出触点自适应控制。在关断期和闭锁状态下，随着${V}_{\Text{AK}}$的增加，PMOS自适应开启。然后，它不仅提供了一个低阻的空穴电流路径来加速与FOC内部漂移区的电子复合，而且还钳制了阳极/n缓冲结的电压降，以抑制阳极空穴注入。因此，SPD LIGBT实现了超快的开关速度，以降低关断损耗(${E}_{\Text{Off}}{)}$，并获得了类似MOS的击穿模式。在阳极电压较低的导通状态下，PMOS关断，SPD LIGBT进入双极导通，没有快速回复效应。IFWD可以实现RC和更低的反向回收费用(${q}_{\text{rr}}{)}$。与分离式短路阳极(SSA)和分离式槽阳极(STA)LIGBT相比，在相同的导通压降(${V}_{\Text{ON})下，LIGBT分别降低了79%和68%。与SSA LIGBT相比，该器件的性能降低了48.1%。
An ultrafast switching lateral insulated gate bipolar transistor (LIGBT) with reverse-conduction (RC) capability is proposed and investigated by simulations. The LIGBT features a self-adaptive pMOS with a floating ohmic contact (FOC) as drain electrode and an integrated freewheeling diode (iFWD) (named self-adaptive pMOS and diode (SPD) LIGBT). The gate of pMOS is self-adaptively controlled by the potential extracting contact above the n-drift region of the iFWD. In the turning-off period and blocking state with increasing ${V}_{\text {AK}}$ , the pMOS is self-adaptively turned on. Then, it not only provides a low-resistance hole current path to accelerate recombining with electrons from the drift region within the FOC but also clamps the voltage drop of $\text{p}^{+}$ anode/n-buffer junction to suppress the anode hole injection. Therefore, the SPD LIGBT achieves an ultrafast switching speed to decrease the turnoff loss ( ${E}_{\text {off}}{)}$ and obtains an MOS-like breakdown mode. In the ON-state with a low anode voltage ${V}_{\text {AK}}$ , the pMOS is turned off and the SPD LIGBT gets into bipolar conduction without snapback effect. The iFWD can realize RC and lower reverse recovery charge ( ${Q}_{\text {rr}}{)}$ . Compared with the separated shorted-anode (SSA) and separated trench anode (STA) LIGBT, the proposed LIGBT decreases ${E}_{\text {off}}$ by 79% and 68% at the same ON-state voltage drop ( ${V}_{\text {on}}{)}$ . The proposed device achieves 48.1% lower ${Q}_{\text {rr}}$ than SSA LIGBT.