Improvement of organic field-effect transistor characteristics via oxidation treatment of Ag nano-ink electrode surfaces
Improvement of organic field-effect transistor characteristics via oxidation treatment of Ag nano-ink electrode surfaces
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DOI：
10.7567/1347-4065/ab48cb
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发表时间：
2019-11
影响因子：
1.5
通讯作者：
M. Minagawa;Kanta Kobayashi;S. Sone;K. Shinbo
中科院分区：
文献类型：
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作者：
M. Minagawa;Kanta Kobayashi;S. Sone;K. Shinbo
制备了表面氧化银纳米油墨电极的有机场效应晶体管（ofet），研究了其电学性能。制备了栅极/n型硅片/经十八烷基三氯硅烷处理的SiO2 /银纳米油墨源漏极/沉积9,10-二苯镧（DPA）层堆叠结构的ofet。在沉积dpa层之前，将银纳米墨电极暴露在184.9 nm和253.7 nm的紫外光下氧化。电极未氧化的ofet不能工作，而电极氧化的ofet的漏极电流随着氧化时间的增加而增加。当电极氧化时间为600 s时，得到了最大的漏极电流（−269 μA），尽管DPA层的电离电位很大（~ 5.8 eV），但接触电阻降低到9.5 kΩ cm。这是氧化Ag电极通过氧化DPA层表面来增强空穴注入的结果。
Organic field-effect transistors (OFETs) containing surface oxidized Ag nano-ink electrodes were fabricated in order to investigate their electrical properties. OFETs having gate electrode/n-type Si wafer/SiO2 treated with octadecyltrichlorosilane/Ag nano-ink source–drain electrodes/deposited 9,10-diphenylanthracene (DPA) layer stacked structures were fabricated. The silver nano-ink electrodes were oxidized by exposure to ultraviolet light (184.9 and 253.7 nm) before DPA-layer deposition. The OFETs having unoxidized electrodes failed to operate, while the drain currents of the OFETs with oxidized electrodes increased with oxidation time. The largest drain current (−269 μA) was obtained for the OFET with an electrode oxidation time of 600 s, which resulted in a reduction in the contact resistance to 9.5 kΩ cm despite the large ionization potential of the DPA layer (∼5.8 eV). The observed behavior is attributed to the oxidized Ag electrodes enhancing hole injection by oxidizing the surface of the DPA layer.