Hierarchically porous silicon with significantly improved photocatalytic oxidation capability for phenol degradation
Hierarchically porous silicon with significantly improved photocatalytic oxidation capability for phenol degradation
复制标题
分级多孔硅显着提高光催化氧化苯酚降解能力
DOI:
10.1016/j.apcatb.2013.03.014
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发表时间:
2013-07
期刊:
影响因子:
--
通讯作者:
Wang, Hua
中科院分区:
文献类型:
--
作者:
Su, Jingyang;Yu, Hongtao;Quan, Xie;Chen, Shuo;Wang, Hua
In this work, hierarchically porous silicon was fabricated through electro-assisted chemical etching using a silicon wafer as a substrate. Pores with an average diameter of ca. 1200nm (macropores) were observed and a large number of nanopores with a diameter of less than 5nm were uniformly distributed over the surface of the macropore, forming the hierarchically porous silicon with nanopores in macropores structure (NP-MPSi). UV–vis diffuse reflection measurements indicated that NP-MPSi has a bandgap of 2.12eV, which is 1.0eV higher than that of the original silicon wafer because of the quantum confinement effect caused by the nanopores. Mott–Schottky experiments further demonstrated that the increase in bandgap of NP-MPSi arises from a positive shift of the valence band potential, which improves its capability for photocatalytic oxidation. NP-MPSi exhibited higher photoelectrochemical stability than macroporous silicon (MPSi), a comparison sample lacking nanopores. Using phenol as an example, photocatalytic experiments under irradiation with a Xe lamp demonstrated that the kinetic constants of phenol degradation and total organic carbon removal using NP-MPSi were nearly 3.5 and 8.0 times larger, respectively, than those using MPSi. This unique porous silicon material is therefore an attractive photocatalyst for environmental applications.
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