Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs
Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs
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DOI：
10.1088/1361-6463/ac8fa0
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发表时间：
2022-09
期刊：
影响因子：
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通讯作者：
P. Fletcher;Guillem Martinez de Arriba;Ye Tian;N. Poyiatzis;C. Zhu;P. Feng;J. Bai;Tao Wang
中科院分区：
文献类型：
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作者：
P. Fletcher;Guillem Martinez de Arriba;Ye Tian;N. Poyiatzis;C. Zhu;P. Feng;J. Bai;Tao Wang
光泵回音壁模式（WGM）激光已被观察到在许多独立的微盘结构。通常使用干法刻蚀来制造微盘，这会导致严重的侧壁损伤，从而导致激光性能的下降，特别是对于超小电注入器件。在本文中，我们展示了高品质的微盘腔与3.5微米直径，通过结合选择性过生长的方法和外延晶格匹配的分布式布拉格反射器（DBR），顶部高反射率（>99%）的介质DBR。InGaN极化激元被发现发生在高质量的微腔。WGM模式的测量，在良好的协议与有限差分时域模拟的位置。此外，观察到激光行为，阈值为410 µW，主模为488 nm。
Optically pumped whispering gallery mode (WGM) lasing has been observed in many freestanding microdisk structures. Dry etching is normally used to fabricate the microdisks, which causes severe sidewall damage, resulting in degradation of lasing performance, especially for ultra-small electrically-injected devices. In this paper, we demonstrate high quality microdisk cavities with 3.5 µm diameter, by combining a selective overgrowth approach and an epitaxial lattice-matched distributed Bragg reflector (DBR), topped with a highly reflective (>99%) dielectric DBR. InGaN polaritons are found to occur in the high-quality microcavities. WGM modes are measured, with the positions in good agreement with finite difference time domain simulations. Furthermore, lasing behaviour is observed with a threshold at 410 µW and a dominant mode at 488 nm.