In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
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氢封端硅表面湿化学氧化的原位红外光谱
DOI：
10.1143/jjap.37.3272
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发表时间：
1998
影响因子：
1.5
通讯作者：
S. Watanabe
中科院分区：
文献类型：
--
作者：
Y. Sugita;S. Watanabe
采用原位红外光谱观察了溶液中氢封端的Si(100)和(111)的氧化早期阶段。观察证实，氧化是从氧原子插入H2O2溶液中最上面的硅原子的背键的反应开始的。结果发现，在臭氧水中，背键和Si-H键均被氧化。讨论了Si-H键及其背键的氧化反应对表面取向的依赖性，并显示了氧化膜岛状生长的证据。
In situ infrared spectroscopy was used to observe the early stage of oxidation on hydrogen-terminated Si(100) and (111) in solution. The observation confirmed that the oxidation starts with the insertion reaction of oxygen atoms to the back bonds of the topmost silicon atoms in H2O2 solution. It was found both that the back bond and Si–H bond were oxidized in ozonized water. The dependence of the oxidation reaction of the Si–H bond and its back bond on surface orientation was discussed and the evidence of island growth of the oxide film was shown.