Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films.
Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films.
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DOI：
10.1039/c8dt00544c
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发表时间：
2018-07
影响因子：
4
通讯作者：
Samuel V F Beddoe;Samuel D. Cosham;A. Kulak;A. Jupp;J. Goicoechea;G. Hyett
中科院分区：
文献类型：
--
作者：
Samuel V F Beddoe;Samuel D. Cosham;A. Kulak;A. Jupp;J. Goicoechea;G. Hyett
本文介绍了亚膦甲酰胺作为一种简单的磷前驱体的用途，它可以与醋酸锌一起用于化学气相沉积(CVD)附着的和结晶的磷化锌薄膜。Zn3P2薄膜有许多潜在的应用，与以前的CVD合成中使用的剧毒、腐蚀性和易燃的磷化氢相比，膦甲酰胺是一种更安全、更有效的前体。
This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn3P2 have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses.