Metamagnetic transitions and electronic structures of CeRu 2 ( Si 1 - x Ge x ) 2
Metamagnetic transitions and electronic structures of CeRu 2 ( Si 1 - x Ge x ) 2
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CeRu 2 ( Si 1 - x Ge x ) 2 的变磁转变和电子结构
DOI：
10.1016/j.physb.2006.01.297
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发表时间：
2006
影响因子：
1.8
通讯作者：
H. Aoki
中科院分区：
文献类型：
--
作者：
M. Sugi;T. Fujiwara;T. Isshiki;Naohiro Kimura;T. Komatsubara;H. Aoki
研究了CeRu 2（Si 1-xGex）2的磁性和dHvA效应.发现低Ge含量样品的赝变磁转变（PMMT）很可能与高Ge含量样品的一级变磁转变相结合，表明CeRu 2Si 2的PMMT是一种与一级变磁转变终点密切相关的现象. dHvA频率随着Ge浓度的增加或跨量子临界点的晶胞体积的增加而连续变化。这是可能的，电子状态以上的伪变磁和一阶变磁过渡连接没有相变。
We have studied the magnetic properties and the dHvA effect of CeRu 2 (Si 1-x Ge x) 2. It is found that the pseudometamagnetic transitions (PMMT) of lower Ge concentration samples are likely to join to the first-order metamagnetic transitions of higher Ge concentration samples, indicating that the PMMT of CeRu2Si2 is a phenomenon closely related with the end point of the first-order metamagnetic transition. The dHvA frequencies change continuously with increasing Ge concentration or increasing unit cell volume across the quantum critical point. It is likely that the electronic states above the pseudometamagnetic and first-order metamagnetic transitions are connected without a phase transition.