Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
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DOI：
10.1007/s10853-017-1217-0
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发表时间：
2017-09
影响因子：
4.5
通讯作者：
K. Paprocki;K. Fabisiak;R. Bogdanowicz;Ł. Gołuński;E. Staryga;M. Szybowicz;M. Kowalska;A. Banaszak-Piechowska
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文献类型：
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作者：
K. Paprocki;K. Fabisiak;R. Bogdanowicz;Ł. Gołuński;E. Staryga;M. Szybowicz;M. Kowalska;A. Banaszak-Piechowska
分别通过热丝化学气相沉积和微波等离子体合成了未掺杂和B掺杂的多晶金刚石薄膜。通过扫描电子显微镜、X射线衍射和拉曼光谱进行结构表征。采用直流电导法和电荷深能级瞬态光谱法对合成金刚石层的电学性能进行了表征。与未掺杂的层相比，B 掺杂的金刚石层表现出更高的 sp2/sp3 比，这对与浅氢受体态相关的局域态密度具有重要影响，这反映在活化能值上，B 掺杂的金刚石层分别达到 38 meV 和未掺杂的金刚石层 55 meV。没有观察到深能级陷阱的存在，例如与 B 相关受体相关的陷阱。
The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher sp2/sp3ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed.