Effect of Adding CO2 to CH4/H2 Mixture for InGaAs/GaAs Selective Reactive Ion Etching
Effect of Adding CO2 to CH4/H2 Mixture for InGaAs/GaAs Selective Reactive Ion Etching
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在 CH4/H2 混合物中添加 CO2 对 InGaAs/GaAs 选择性反应离子刻蚀的影响
DOI：
10.1143/jjap.34.6819
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发表时间：
1995
影响因子：
1.5
通讯作者：
Shigeru Kuroda Shigeru Kuroda
中科院分区：
文献类型：
--
作者：
M. Nihei;N. Hara;H. Suehiro;Shigeru Kuroda Shigeru Kuroda
首次提出了在传统的CH_4/H_2混合气体中加入CO_2进行InGaAs/GaAs选择性反应离子刻蚀（RIE）的方法。我们表明，添加CO2（7.8%）不仅减少了聚合物沉积在蚀刻过程中，但也实现了显着增加的In0.52Ga0.48As/GaAs的选择性从2到最大值为6.5。我们用X射线光电子能谱（XPS）分析了刻蚀后的表面，发现在CH 4/H2 RIE后，表面是富含聚合物的，而在我们的CH 4/H2/CO2（7.8%）RIE后，表面变成了富含Ga 2 O3的。根据这一结果，我们提出了InGaAs/GaAs选择性RIE的机理。
InGaAs/GaAs selective reactive ion etching (RIE) by adding CO2 to a conventional CH4/H2 mixture was developed for the first time. We demonstrated that adding CO2 (7.8%) not only reduced polymer deposition during etching, but also achieved a significant increase in the In0.52Ga0.48As/GaAs selectivity from 2 to a maximum value of 6.5. We analized the etched surface with X-ray photoelectron spectroscopy (XPS) and found that the surface is polymer-rich after the CH4/H2 RIE, but it changes to Ga2O3-rich after our CH4/H2/CO2 (7.8%) RIE. From this result, we proposed a mechanism of the InGaAs/GaAs selective RIE.