Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
复制标题
微波频率下 MODFET 固有模型元件值的偏置依赖性
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
P. Tasker
中科院分区：
文献类型：
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作者：
B. Hughes;P. Tasker
利用HP 8510网络分析仪的特殊功能，测量了MODFFET的S参数随偏置而不是频率的变化。从S参数的偏置扫描中快速得到f/sub T/和f/sub max/的优值图，并容易找到最佳偏置点，将测量值与器件寄生效应解嵌入后，计算出MODFFET的本征器件元件。该技术证明了与0.15 μ m赝晶MODFET的f/子T/为150 GHz的。讨论了该技术对于理解MODFET操作的有用性。利用这种技术，可以在13秒内测量和绘制本征元件值的偏置扫描。>
S-parameters of MODFETs were measured versus bias instead of frequency with a special feature of the HP8510 network analyzer. Figure of merit plots, f/sub T/, and f/sub max/, were quickly generated from the bias sweeps of S-parameters, and optimum bias points were easily found. The intrinsic device elements of MODFETs were calculated after de-embedding the measurements from the device parasitics. The technique is demonstrated with a 0.15- mu m pseudomorphic MODFET with an f/sub T/ of 150 GHz. The usefulness of the technique for understanding the operation of the MODFETs is discussed. With this technique a bias scan of an intrinsic element value can be measured and plotted in 13 s. >