Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
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离轴 6H-SiC 衬底上 6H-SiC 薄膜的化学气相沉积和表征
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
R. Davis
中科院分区：
文献类型：
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作者：
H. Kong;J. Glass;R. Davis
采用化学气相沉积（CVD）方法，在1773 K下，在离轴3°的6 H-SiC {0001}衬底上外延生长了高质量的单晶6 H-SiC薄膜。基本上，如通过横截面透射电子显微镜（XTEM）所确定的，从外延层/衬底界面没有产生缺陷。在6 H-SiC衬底上生长的β-SiC中观察到的双定位边界被消除，如平面图TEM所证实的。观察到生长的薄膜的表面形貌对衬底的倾斜取向的强烈依赖性，并讨论了这种现象的原因。非故意掺杂的6 H-SiC薄膜总是表现出n型导电，载流子浓度约为1016 cm−3。在CVD 6 H-SiC薄膜上制作了Au-6 H-SiC肖特基势垒二极管，发现55 V反向偏压下的漏电流仅为3.2×10−5 A/cm 2。这是比较SiC薄膜生长在其他…
High‐quality, monocrystalline 6H‐SiC thin films have been epitaxially grown on 6H‐SiC {0001} substrates which were prepared 3° off‐axis from 〈0001〉 towards 〈1120〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross‐sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β‐SiC grown on 6H‐SiC substrates were eliminated as confirmed by plan‐view TEM. A strong dependence of the surface morphology of the as‐grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H‐SiC thin films always exhibit n‐type conduction with a carrier concentration on the order of 1016 cm−3. Au‐6H‐SiC Schottky barrier diodes were fabricated on the CVD 6H‐SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10−5 A/cm2. This is compared to SiC films grown on oth...