Sheet-Type Flexible Organic Active Matrix Amplifier System Using Pseudo-CMOS Circuits With Floating-Gate Structure
Sheet-Type Flexible Organic Active Matrix Amplifier System Using Pseudo-CMOS Circuits With Floating-Gate Structure
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DOI:
10.1109/ted.2012.2220853
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发表时间:
2012-12-01
影响因子:
3.1
通讯作者:
Someya, Takao
中科院分区:
文献类型:
--
作者:
Yokota, Tomoyuki;Sekitani, Tsuyoshi;Someya, Takao
We successfully fabricated a large-area flexible strain-sensing system based on a 2-D array of organic self-bias-feedback amplifier with a signal gain of 400. The amplifier system consists of three layers: a self-assembled monolayer (SAM) capacitor matrix, a 2-D array of organic pseudo-CMOS inverters with a floating-gate structure using SAM gate dielectric, and an active matrix of organic thin-film transistors. The amplifier sheet comprises 8 x 8 amplifier cells, with an effective size of 7 x 7 cm(2). The organic transistors exhibit a mobility of 1.7 cm(2)/V . s in the saturation regime at an operation voltage of 2 V. A strain sensor is made of a polymeric piezoelectric [polyvinylidene difluoride (PVDF)] sheet. When a cell of the PVDF sheet is touched (that is, when mechanical pressure is applied), a small signal is generated by intermolecular polarization in the PVDF. These signals are amplified by the organic amplifier circuits from 10 to 150 mV.