Piezoelectric substrate-induced strain engineering on tuning polarized Raman spectra of crystalline black phosphorus
Piezoelectric substrate-induced strain engineering on tuning polarized Raman spectra of crystalline black phosphorus
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DOI：
10.1063/5.0143759
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发表时间：
2023-03
影响因子：
4
通讯作者：
Yuqian Zhao;Feng Guo;Sin-Yi Pang;W. Io;L. Wong;Jiong Zhao;J. Hao
中科院分区：
文献类型：
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作者：
Yuqian Zhao;Feng Guo;Sin-Yi Pang;W. Io;L. Wong;Jiong Zhao;J. Hao
黑磷（BP）纳米片在从纳米电子学/光子学到量子物理学的广泛领域中具有重要的研究价值。在这里，压电致动器被用来执行双轴应变工程的各向异性拉曼响应的研究转移到氧化物电介质衬底的双折射BP。三个特征峰在拉伸应变下发生红移，而在压缩应变下发生蓝移。当施加-0.2%的压缩应变时，B2 g模的拉曼位移率可达15.3 cm-1/%。相比之下，在施加0.2%的拉伸应变时，B2 g模式移动了−12.2 cm−1/%。此外，我们还计算了晶体的Grüneisen参数，从而推导出了晶体的拉、压应变与声子行为之间的关系。讨论了应变拉曼响应的物理机制，它与BP中键角和键长的变化有关。此外，双轴应变调制可能会改变BP的各向异性色散，揭示了BP在创新偏振光检测中的巨大潜力。
A black phosphorus (BP) ultrathin nanosheet has significant research values in broad fields ranging from nano-electronics/photonics to quantum physics. Here, a piezoelectric actuator is utilized to perform biaxial strain engineering for the investigation of anisotropic Raman response of the ultrathin BP transferred to the oxide dielectric substrate. Three characteristic peaks exhibit redshift when tensile strain is applied, while the peaks reveal blueshift under compressive strain. When applying compressive strain of −0.2%, the Raman shift rate of B2g mode can reach up to 15.3 cm−1/%. In contrast, with the application of 0.2% tensile strain, the B2g mode is shifted by −12.2 cm−1/%. Furthermore, we calculated the Grüneisen parameters to deduce the relationship between the tensile or compressive strain and phonon behavior of crystalline BP. The physical mechanism behind the observation of strained Raman response is discussed, which is related to the variations of bond angle and bond length in BP. Additionally, biaxial strain modulation may change the anisotropic dispersion of BP, revealing the significant potential of BP in innovative polarized light detection.