Electrical spin injection into moderately doped silicon enabled by tailored interfaces
Electrical spin injection into moderately doped silicon enabled by tailored interfaces
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DOI：
10.1103/physrevb.82.241305
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发表时间：
2010-12-08
影响因子：
3.7
通讯作者：
Jonker, B. T.
中科院分区：
文献类型：
--
作者：
Jansen, R.;Min, B. C.;Jonker, B. T.
而自旋注入从铁磁体到重掺杂的硅是通过隧道穿过一个狭窄的耗尽区，这表明，对于中等掺杂的硅，抑制肖特基势垒是至关重要的。通过在Al2O3隧道势垒生长之前将Si表面暴露在Cs通量中来减少载流子损耗，我们展示了通过从Fe隧穿到Si的自旋注入（通过圆极化电致发光证实），并实现了在室温下在载流子密度为1.5 x 1018 cm（-3）的Ni80Fe20/Al2O3/Si结中诱导的自旋积累的电检测（通过Hanle效应）。因此，定制的界面使自旋注入适度掺杂的Si。
Whereas spin injection from a ferromagnet into heavily doped Si is facilitated by tunneling through a narrow depletion region, it is shown here that for moderately doped Si it is crucial to suppress the Schottky barrier. Reducing carrier depletion by exposing the Si surface to a Cs flux prior to Al2O3 tunnel barrier growth, we demonstrate spin injection by tunneling from Fe into Si (confirmed by circular polarized electroluminescence) and achieve electrical detection (via the Hanle effect) of spin accumulation induced at room temperature in Ni80Fe20/Al2O3/Si junctions with 1.5 x 1018 cm(-3) carrier density. Tailored interfaces thus enable spin injection into moderately doped Si.