Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy
Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy
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DOI：
10.1063/1.1388883
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发表时间：
2001-07
影响因子：
4
通讯作者：
M. Lukitsch;Y. Danylyuk;V. Naik;Changhe Huang;G. Auner;L. Rimai;R. Naik
中科院分区：
文献类型：
--
作者：
M. Lukitsch;Y. Danylyuk;V. Naik;Changhe Huang;G. Auner;L. Rimai;R. Naik
采用等离子体源分子束外延技术，在蓝宝石（0001）衬底上，在375℃的低温条件下，生长出了厚度为0≤x≤1的Al1−xInxN外延薄膜。反射高能电子衍射和x射线衍射测量均证实了c面生长具有以下外延关系：氮化物[0001]∥蓝宝石[0001]，氮化物< 0110 >∥蓝宝石< 2110 >。然而，晶体嵌合程度和成分波动随x的增加而增加。与早期的研究相比，通过光学透射和反射测量确定的观测到的直接能带隙显示出相对较小的弯曲。电阻率和霍尔效应测量显示，这些合金中的n型电导率，载流子浓度n大于或等于1019 cm−3的富in合金和n≥1010 cm−3的富al合金。
Epitaxial Al1−xInxN thin films with 0⩽x⩽1 have been grown by plasma source molecular beam epitaxy on sapphire (0001) substrates at a low temperature of 375 °C. Both reflection high-energy electron diffraction and x-ray diffraction measurements confirm the c-plane growth with the following epitaxial relations: nitride [0001] ∥ sapphire [0001] and nitride 〈0110〉 ∥ sapphire 〈2110〉. However, the degree of crystalline mosaicity and the compositional fluctuation increase with increasing x. The observed direct energy band gap, determined using optical transmission and reflection measurements show relatively less bowing compared to some earlier studies. Electrical resistivity and Hall effect measurements show n-type electrical conductivity in these alloys with carrier concentrations n⩾1019 cm−3 for In-rich alloys and n⩽1010 cm−3 for Al-rich alloys.