1.3-$mu$ m GaNAsSb–GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links
1.3-$mu$ m GaNAsSb–GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links
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用于 10 吉比特以太网链路的 1.3-$mu$ m GaNAsSb–GaAs UTC 光电探测器
DOI：
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发表时间：
2009
影响因子：
2.6
通讯作者：
D. Jager
中科院分区：
文献类型：
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作者：
S. Fedderwitz;A. Stohr;K. Tan;S. Yoon;M. Weiss;A. Poloczek;W. Loke;S. Wicaksono;T. Ng;V. Rymanov;A. Patra;E. Tangdiongga;D. Jager
我们报告10千兆以太网（IEEE 802.3ae）光纤传输在1.3妈妈波长利用高速GaNAsSb单行进载波光电探测器（PD）生长在GaAs衬底上。具有约0.88 eV的光学带隙，PD适合于高达约1380 nm波长的近红外操作。在1.3 μ m波长下，无涂层PD的直流响应度为0.35A/W，3 dB截止频率为14 GHz。使用这种GaAs基GaNAsSb PD，在1.3 μ m波长的10 Gb以太网数据的无差错（误码率=10-12）传输成功地证明。
We report on 10 gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3 mum wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate. With an optical bandgap of ~0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-mu m wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate=10-12 ) transmission of 10-Gb Ethernet data at 1.3-mu m wavelength is successfully demonstrated.