Exploration of Lattice-matched Monolithic AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5-junction Solar Cell Grown by MOVPE
Exploration of Lattice-matched Monolithic AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5-junction Solar Cell Grown by MOVPE
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MOVPE 生长晶格匹配单片 AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5 结太阳能电池的探索
DOI：
10.1109/pvsc45281.2020.9300437
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
Wenyi Yang
中科院分区：
文献类型：
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作者：
Xiaobin Zhang;Shanshan Huang;Yanzheng Sun;Kaiwen Lin;Yuehui Wang;Wenyi Yang
制备了一种基于Ge的栅格匹配单片AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5结（5J）太阳能电池，用于探索具有36%超高效率的商用空间电池。首先，获得了空间效率为30.11% （am0,1 -sun）的AlGaInP/AlGaAs/GaInAs/Ge四结（4J）电池。最后，通过将1.05 eV的GaInNAs子电池诱导到4J结构中，获得了一个活性面积为11.75 cm2的5J器件，效率较低，为28.7%。5J电池的光伏性能受到GaInNAs子电池的限制。而短路电流（$J_{SC}$）为11.5 mA/cm2，表明锗基5J电池是实现超高效率空间电池的可行途径。
A Ge-based lattice-matched monolithic AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5-junction (5J) solar cell is fabricated for exploring commercial space cell with ultra-high efficiency towards 36%. Firstly, an AlGaInP/AlGaAs/GaInAs/Ge four-junction (4J) cell is obtained with a space efficiency of 30.11% (AM0, 1-sun). Finally, a 5J device with an active area of 11.75 cm2 is achieved with a lower efficiency of 28.7% by inducing a 1.05 eV GaInNAs subcell into the 4J structure. The photovoltaic performance of 5J cell is restricted by GaInNAs subcell. While, the short-circuit current ($J_{SC}$) as 11.5 mA/cm2 indicates that Ge-based 5J cell is a viable path to ultra-high efficiency space cell.