Full Tunability of Strain along the fcc-bcc Bain Path in Epitaxial Films and Consequences for Magnetic Properties
Full Tunability of Strain along the fcc-bcc Bain Path in Epitaxial Films and Consequences for Magnetic Properties
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DOI：
10.1103/physrevlett.103.216101
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发表时间：
2009-11-20
影响因子：
8.6
通讯作者：
Faehler, S.
中科院分区：
文献类型：
--
作者：
Buschbeck, J.;Opahle, I.;Faehler, S.
应变共格薄膜生长通常局限于无应变薄膜或低应变。在这里，我们提出了一种方法来实现高应变在较厚的薄膜，通过使用材料与固有的结构不稳定性。作为一个例子，50 nm厚的Fe70Pd30磁性形状记忆合金的外延膜进行了检查。在各种衬底上的应变相干生长使我们能够调整的tetraphenic失真从c/a（bct）= 1.09至1.39，涵盖了大部分的贝恩转换路径从fcc到bcc晶体结构。磁性测量和X射线圆二色性测量表明，居里温度，轨道磁矩，和磁晶各向异性的变化范围很广。
Strained coherent film growth is commonly either limited to ultrathin films or low strains. Here, we present an approach to achieve high strains in thicker films, by using materials with inherent structural instabilities. As an example, 50 nm thick epitaxial films of the Fe70Pd30 magnetic shape memory alloy are examined. Strained coherent growth on various substrates allows us to adjust the tetragonal distortion from c/a(bct)=1.09 to 1.39, covering most of the Bain transformation path from fcc to bcc crystal structure. Magnetometry and x-ray circular dichroism measurements show that the Curie temperature, orbital magnetic moment, and magnetocrystalline anisotropy change over broad ranges.