Evaluation of Channel Modulation in IN203/(Bi, La)4Ti3012 Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements
Evaluation of Channel Modulation in IN203/(Bi, La)4Ti3012 Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements
复制标题
通过电容电压测量评估 IN203/(Bi, La)4Ti3012 铁电栅极薄膜晶体管的通道调制
DOI：
10.1080/00150193.2012.676933
复制
发表时间：
2012
期刊：
影响因子：
0.8
通讯作者：
Eisuke Tokumitsu & Kazuya Kikuchi
中科院分区：
文献类型：
--
作者：
0. Kojima;S. Ohta;T. Kita;and T.Isu;Eisuke Tokumitsu & Kazuya Kikuchi
本文用电容-电压特性讨论了In_2O_3/（Bi，La）_4Ti_3O_（12）铁栅薄膜晶体管的沟道形成。当施加负栅极偏压时，仅重叠区域对电容负责，因为沟道区域是关断的并且源极和漏极区域是隔离的。另一方面，它示出的源/漏极和栅极之间的电容同意与源和栅极在正栅极偏置和测量的电容覆盖整个沟道区域除了源和漏重叠区域。
Channel formation in In2O3/(Bi,La)4Ti3O12ferroelectri-gate thin film transistors is discussed by means of capacitance-voltage characteristics. When the negative gate bias is applied, only the overlap regions are responsible for the capacitance, because the channel region is off and the source and drain regions are isolated. On the other hand, it is shown that the capacitance between source/drain and gate agrees with that of source and gate at the positive gate bias and that the measured capacitance covers the whole channel area in addition to the source and drain overlap regions.